发明名称 LOCALIZED HEATING AND COOLING OF SUBSTRATES
摘要 The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. In one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperature control.
申请公布号 KR20030007466(A) 申请公布日期 2003.01.23
申请号 KR20027012183 申请日期 2001.03.15
申请人 发明人
分类号 H01L21/31;H01L21/324;H01L21/00;H01L21/26 主分类号 H01L21/31
代理机构 代理人
主权项
地址