发明名称 RESIST COMPOSITIONS
摘要 Practical resist compositions which have high resolution,high sensitivity and good pattern profile suitable for electron beam microlithography or the like and do not cause outgassing even when irradiated with an actinic radiation under high vacuum.Namely,(1)a resist composition composed essentially of at least one polymer comprising monomer units represented by the general formula[1],monomer units represented by the general formula[2],and monomer units represented by the general formula[3]:[1][2][3]at least one compound represented by the general formula[4]which generates an acid by irradiation:[4]an organic basic compound,and a solvent;(2)a resist composition as set forth in item(1)which further contains a polymer represented by the general formula[13]:[13]and(3)a resist composition as set forth in item(1)or(2)which further contains a compound represented by the general formula[12]which generates an acid by irradiation:[12]
申请公布号 WO03007079(A1) 申请公布日期 2003.01.23
申请号 WO2002JP06218 申请日期 2002.06.21
申请人 WAKO PURE CHEMICAL INDUSTRIES, LTD.;MAESAWA, TSUNEAKI;URANO, FUMIYOSHI 发明人 MAESAWA, TSUNEAKI;URANO, FUMIYOSHI
分类号 G03F7/004;G03F7/039;(IPC1-7):G03F7/039;H01L21/027 主分类号 G03F7/004
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