Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same including intermediate surface cleaning

摘要

Process for fabrication of semiconductor structures and devices (267, 270) including an intermediate surface cleaning procedure performed to remove metal contaminants in the surface region (262) of a seed film (261) of a monocrystalline compound semiconductor material that is formed overlying a perovskite oxide film (24), which is the source of the contaminants. After removal of the contaminated surface region (262), monocrystalline compound semiconductor material is regrown on the remaining seed film (264) to form a layer (266) having a thickness suitable for forming devices therein.