| 摘要 |
PURPOSE: An isolation region of semiconductor devices and a method for forming the same are provided to improve step coverage between an active and isolation region by using a trench isolation layer having a double structure. CONSTITUTION: A trench is formed in a semiconductor substrate(100). A thermal oxide layer(106) is formed in the trench by thermal oxidation. The first insulating layer(110) is partially filled in the trench. The second insulating layer(114) is then entirely filled into the trench. At this time, the first insulating layer(110) is made up of an oxide layer and the second insulating layer(114) is composed of a nitride layer.
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