| 发明名称 |
Improvements in or relating to methods of manufacturing silicon semi conductor devices |
| 摘要 |
<p>The following alloys (percentages by weight) are used in the manufacture of transistors (see Division H1): 99.5% tin, 0.5% arsenic; 98% tin, 2% arsenic; 99.7% gold, 0.3% antimony.</p> |
| 申请公布号 |
GB996295(A) |
申请公布日期 |
1965.06.23 |
| 申请号 |
GB19610037528 |
申请日期 |
1961.10.19 |
| 申请人 |
PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED |
发明人 |
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| 分类号 |
C22C13/00;H01L21/00;H01L21/22;H01L21/228;H01L21/24;H01L21/48;H01L23/10;H01L23/14;H01L29/73 |
主分类号 |
C22C13/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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