A method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions

摘要

This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities, and modifies the device to achieve a correlation between the device characteristics and the predetermined qualities.