| 摘要 |
PURPOSE: A method for manufacturing an MOS transistor is provided to improve current driving capability and punch-through property between source and drain by using a lower and upper gate electrode. CONSTITUTION: A groove is formed by selectively etching an insulating substrate(10). A lower gate electrode(11) is formed in the groove. After forming a lower insulating layer(12) on the lower gate electrode, a silicon layer(13) as a substrate is grown on the lower gate electrode. Ion-implantation processing is performed to control the threshold voltage. After activating ions implanted in the silicon layer(13), an upper gate insulating layer(16) is formed on the silicon layer. After forming a silicon spacer(15) at both sidewalls of the silicon layer(13), an upper gate electrode(17) is formed on the resultant structure. By implanting heavily doped dopants into the silicon layer using the upper gate electrode as a mask, a source/drain(14) is formed in the silicon layer(13). After forming an insulating layer(18) on the resultant structure, contact holes are formed to expose the source/drain. A metal contact(19) is formed in the contact holes. Then, a metal electrode(20) is formed to connect the metal contact(19).
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