发明名称 Annealing method and device
摘要 <p>A method for annealing a thin film, such as a ferroelectric or magnetic thin film comprising the steps of (i) taking a thin film 4 carried on a temperature sensitive substrate 6. The thin film having a radiation absorbing structure formed thereon, and (ii) illuminating the radiation absorbing structure 20 with a pulse 2 of radiation produced by a laser. The radiation absorbing structure is heated sufficiently by the pulse of radiation to anneal all or some of the thin film without exceeding the temperature budget of the temperature sensitive substrate. The method is used to fabricate an infra-red detector.</p>
申请公布号 GB0229427(D0) 申请公布日期 2003.01.22
申请号 GB20020029427 申请日期 2002.12.18
申请人 QINETIQ LIMITED 发明人
分类号 H01L21/314;H01L21/316 主分类号 H01L21/314
代理机构 代理人
主权项
地址