Kiselkarbidhalvledaranordning

摘要

A silicon carbide semiconductor structure base has an n-SiC surface channel layer (5) which contains at most 1 multiply 1015 cm-3 nitrogen. - A silicon carbide semiconductor structure comprises: - (a) an n-SiC substrate (1) having a higher resistivity n-SiC layer (2) on its front surface; - (b) a p-type base region (3a, b) and a shallower n-type source region (4a, b) in the n-SiC layer (2); - (c) an n-SiC surface channel layer (5) which contains at most 1 multiply 1015 cm-3 nitrogen and which is provided on the p-type base region for connecting the n-type source region and the n-SiC layer (2); - (d) a gate insulation layer (7) and a gate electrode (8) on the n-type surface channel layer; - (e) a source electrode (10) in contact with the p-type base region and the n-type source region; and - (f) a drain electrode (11) on the back face of the substrate. - Independent claims are also included for the following: - (i) similar silicon carbide semiconductor structures; and - (ii) processes for producing the silicon carbide semiconductor structures.