| 发明名称 |
GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 mu m, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 mu m. <IMAGE></p> |
| 申请公布号 |
EP1278249(A1) |
申请公布日期 |
2003.01.22 |
| 申请号 |
EP20010917703 |
申请日期 |
2001.03.30 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
UEMURA, TOSHIYA;HIRANO, ATSUO;OTA, KOICHI;NAGASAKA, NAOHISA |
| 分类号 |
H01L33/32;H01L33/38;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/32 |
| 代理机构 |
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