发明名称 |
Composition for forming low dielectric constant insulating film, method of forming insulting film using the insulating film produced thereby |
摘要 |
<p>A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed. <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP1278214(A1) |
申请公布日期 |
2003.01.22 |
申请号 |
EP20020015605 |
申请日期 |
2002.07.15 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHUN-ICHI, FUKUYAMA;TAMOTSU, OWADA;HIROKO, INOUE |
分类号 |
H01L21/768;H01B3/30;H01B3/46;H01L21/31;H01L21/312;H01L23/522;H05K1/00;(IPC1-7):H01B17/36 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|