发明名称 Composition for forming low dielectric constant insulating film, method of forming insulting film using the insulating film produced thereby
摘要 <p>A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed. &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP1278214(A1) 申请公布日期 2003.01.22
申请号 EP20020015605 申请日期 2002.07.15
申请人 FUJITSU LIMITED 发明人 SHUN-ICHI, FUKUYAMA;TAMOTSU, OWADA;HIROKO, INOUE
分类号 H01L21/768;H01B3/30;H01B3/46;H01L21/31;H01L21/312;H01L23/522;H05K1/00;(IPC1-7):H01B17/36 主分类号 H01L21/768
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