| 发明名称 |
METHOD OF GENERATING BALLISTIC ELECTRONS AND BALLISTIC ELECTRON SOLID SEMICONDUCTOR ELEMENT AND LIGHT EMITTING ELEMENT AND DISPLAY DEVICE |
| 摘要 |
<p>A method of generating ballistic electrons with a high controllability by applying an electric field to a nano-structure micro-crystal layer or a semi-insulating layer of a semiconductor to generate ballistic electrons or quasiballistic electrons by a multiple-tunnel effect; and a semiconductor device used in this method and provided with a practical material constitution. <IMAGE></p> |
| 申请公布号 |
EP1278227(A1) |
申请公布日期 |
2003.01.22 |
| 申请号 |
EP20010915782 |
申请日期 |
2001.03.26 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
发明人 |
KOSHIDA, NOBUYOSHI |
| 分类号 |
H01J1/308;H01J1/312;H01J31/12;H01J63/06;(IPC1-7):H01J1/312;H01J9/02;H01J1/62;H01L29/66 |
主分类号 |
H01J1/308 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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