| 摘要 |
A thin film crystal wafer with pn-junction comprising a first layer of a first conductivity type which is a 3-5 group compound semiconductor represented by a general formula: Inx Gay AlzP (0≤x≤1, 0≤y≤1, 0≤z≤, x+y+z=1), and the second layer of a first conductivity type which is a 3-5 group compound semiconductor represented by a general formula: InxGayAlz, As (0≤x≤1, 0≤y≤1, 0≤z≤1, x+y+z=1), said second layer being made above said first layer, and at a heterojunction interface formed between said first layer and said second layer, further comprising a charge compensation layer of a first conductivity type with an impurity concentration higher than that of said first and second layers. <IMAGE> |
