Wafer carrier with minimal contact

摘要

A high breakdown voltage pch-MOSFET having a breakdown voltage of 150 V or more and a control element controlling the same are formed in a common n- epitaxial layer. Only an n-type region of n- epitaxial layer is distributed at a region located between the high breakdown voltage pch-MOSFET and the control element and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area.