发明名称 |
Structure and fabrication process for an improved polymer light emitting diode |
摘要 |
The present invention discloses an organic light-emitting diode (LED). The organic light emitting diode is supported on an indium/tin oxide 110 (ITO) coated glass substrate 105. The organic light-emitting diode includes an amorphous-silicon (alpha-Si) resistive layer 115 covering the ITO 110 coated glass substrate 105. The organic light-emitting diode 100 further includes a polyaniline (PANI) layer 120 covering the amorphous silicon (alpha-Si) resistive layer 115 and an organic light emitting layer 125 overlying the PANI layer 120. And, the organic light-emitting diode 100 further has a conductive electrode layer 130 covering the light emitting layer 125. In a preferred embodiment, the amorphous silicon (alpha-Si) resistive layer 115 functioning as a current limiting layer for limiting a current density conducted between the ITO 110 coated glass substrate 105 and the conductive electrode layer 130 under a maximum allowable current density of 1000 mA/cm2. In another preferred embodiment, the amorphous silicon (alpha-Si) resistive layer 115 functioning as a current distribution layer for distributing a current conducted between the ITO coated glass substrate and the conductive electrode layer. Thus, the difference between a greatest current density from a smallest current density is under a maximum allowable current density difference of 1000 mA/cm2. In summary, this invention discloses an organic light-emitting diode (LED) 100 that includes an inorganic layer 115 functioning as a current limiting layer.
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申请公布号 |
US6509581(B1) |
申请公布日期 |
2003.01.21 |
申请号 |
US20000538381 |
申请日期 |
2000.03.29 |
申请人 |
DELTA OPTOELECTRONICS, INC. |
发明人 |
TSAI CHUN-HUI;CHEN LAI-CHENG;PENG CHUO-CHI |
分类号 |
H01L51/50;H01L51/52;(IPC1-7):H01L35/24;H01L51/00 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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