| 摘要 |
Three terminal magnetic random access memory structures and methods. One aspect is a memory cell. One embodiment of the memory cell includes a first conductor line, a second conductor line, a third conductor line, and a magnetic storage element. The magnetic storage element is operably positioned to be magnetically coupled to first, second and third magnetic fields produced by energized first, second and third conductor lines, respectively. The magnetic storage element is adapted to be written by a vector sum of the first, second and third magnetic fields. One aspect is a method for writing to a magnetic storage device. According to one embodiment of this method, first, second and third magnetic field vectors are formed at the magnetic storage device. The magnetic storage device is written by a vector sum of the first, second and third magnetic field vectors.
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