发明名称 Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer
摘要 In a plasma reactor for processing a semiconductor wafer having an overhead inductive coil antenna, automatic compensation for the load impedance shift that accompanies plasma ignition is achieved using fixed elements. This is accomplished by applying RF power to an intermediate tap of the coil antenna that divides the antenna into two portions, while permanently suppressing the inductance of one of the two portions to an at least nearly fixed level.
申请公布号 US6508198(B1) 申请公布日期 2003.01.21
申请号 US20000569834 申请日期 2000.05.11
申请人 APPLIED MATERIALS INC. 发明人 HOFFMAN DANIEL J.;LOEWENHARDT PETER K.;FUENTES VICTOR H.;LIANG QIWEI
分类号 H01J37/32;(IPC1-7):C23C16/507 主分类号 H01J37/32
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