摘要 |
A ferroelectric memory element and an electronic apparatus provided with this ferroelectric memory element are provided with a thin film recording layer of less than 50 nm film thickness having a high polarization moment and a high Curie temperature, wherein a recording layer of BaTiO3 is fabricated so as to be oriented in a pseudo-cubic system <111> direction in a trigonal crystal structure, and in order to increase the polarization moment and Curie temperature, the unit cell in BaTiO3 film is elongated more than 2% in the pseudo-cubic system <111> direction compared with the unit cell in a bulk material of BaTiO3, wherein in order to produce lattice strain in the crystal structure of the recording layer, the recording layer is grown epitaxially on the electrode layer that serves as the base layer, the ferroelectric memory element being provided with the recording layer, and the electronic apparatus being provided with the ferroelectric memory element.
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