发明名称 Power down voltage control method and apparatus
摘要 A semiconductor device for controlling entry to and exit from a power down mode (DPD) of a semiconductor memory, comprising a plurality of voltage generators for providing operating voltages to the semiconductor memory; a DPD controller for detecting a DPD condition and for generating a DPD signal to control the application of the operating voltages to the semiconductor memory; and circuitry for controlling the timing of turning on/off the plurality of voltage generators upon entry/exit of DPD mode to reduce surge current through the semiconductor memory to less than maximum current level.
申请公布号 US6510096(B2) 申请公布日期 2003.01.21
申请号 US20010981945 申请日期 2001.10.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JONG-HYUN;YOO JEI-HWAN;LEE JONG-EON;JANG HYUN-SOON
分类号 G11C11/407;G11C5/14;G11C7/22;(IPC1-7):G11C8/02 主分类号 G11C11/407
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