发明名称 |
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate |
摘要 |
A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.
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申请公布号 |
US6509234(B1) |
申请公布日期 |
2003.01.21 |
申请号 |
US20020200652 |
申请日期 |
2002.07.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN |
分类号 |
H01L21/336;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/336;H01L21/00;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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