发明名称 |
Semiconductor device having SOI structure and method of fabricating the same |
摘要 |
A semiconductor device having an SOI structure capable of effectively preventing diffusion of an impurity from a source/drain region on an endmost portion of a silicon layer under a gate electrode is disclosed. In this semiconductor device, nitrogen is introduced into at least either a source/drain region or an end portion of a semiconductor layer located under a gate electrode, and the concentration profile of the nitrogen has a first concentration peak at least in either one of an endmost portion of the source/drain region in the direction where the gate electrode extends and an endmost portion of the semiconductor layer located under the gate electrode. Due to this concentration profile of nitrogen, point defects or the like serving as mediation for diffusion of an impurity are trapped, whereby diffusion of the impurity from the source/drain region is inhibited as a result. Thus, generation of an abnormal leakage current or the like is prevented.
|
申请公布号 |
US6509211(B2) |
申请公布日期 |
2003.01.21 |
申请号 |
US20010790699 |
申请日期 |
2001.02.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YAMAGUCHI YASUO;MAEDA SHIGENOBU;KIM IIJONG |
分类号 |
H01L21/265;H01L21/336;H01L21/339;H01L21/425;H01L27/12;H01L29/786;(IPC1-7):H01L21/339 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|