发明名称 |
Self-aligned floating body control for SOI device through leakage enhanced buried oxide |
摘要 |
A semiconductor-on-insulator (SOI) device formed on an SOI structure with a buried oxide (BOX) layer disposed therein and an active region disposed on the BOX layer having active regions defined by isolation trenches and the BOX layer. The SOI device includes a gate formed over one of the active regions. The gate defines a channel interposed between a source and a drain formed within one of the active regions. The SOI device includes a leakage enhanced region within the BOX layer defined by the gate.
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申请公布号 |
US6509613(B1) |
申请公布日期 |
2003.01.21 |
申请号 |
US20010849494 |
申请日期 |
2001.05.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EN WILLIAM GEORGE;KRISHNAN SRINATH;AN JUDY XILIN |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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