Semiconductor memory device with an on-chip error correction circuit and a method for correcting a data error therein

摘要

Disclosed is semiconductor memory device and a method for correcting a data error therein. The device comprises a memory cell array that stores a plurality of data bits and a plurality of check bits corresponding to the plurality of data bits. A read circuit is further provided that performs an operation of reading out the plurality of data bits and the plurality of check bits from the memory cell array. The semiconductor memory device further comprises error circuits for correcting a first error in the data bits of the first group and a second error in the data bits of the second group, respectively. The error circuit receives in parallel odd-numbered and even-numbered data and check bits read out from the memory cell array during a first cycle of a read mode of operation and generates first syndrome bits and second syndrome bits. During a second cycle of the read mode of operation, the circuit corrects the error in the odd-numbered data bits and the error in the even-numbered data bits responsive to the first and the second syndrome bits, respectively.