| 摘要 |
A semiconductor device includes inner leads which project into a device hole of a polyimide base material having a wiring pattern on its surface and which are connected to the wiring pattern, and first and second semiconductor chips which are connected to the inner leads with their electrode bearing surfaces facing each other. The second semiconductor chip is bonded with the inner leads at a depression which is created as a result of bonding between the first semiconductor chip and the inner leads. As a result, much less time is required for the bonding of the semiconductor chip, an electrical component (such as a semiconductor chip), and the inner leads, and much less time also for manufacture, in addition to preventing wire breakage between the semiconductor chip, the electrical component, and the inner leads.
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