发明名称 Voltage-level shifter and semiconductor memory using the same
摘要 A voltage-level shifter has a first and a second power supply terminal to which a first and a second potential are supplied, respectively, the second potential being lower than the first potential; a first input terminal to which a first input signal is supplied, the first input signal having a high and a low level according to the first and the second potentials; a second input terminal to which a second input signal is supplied, the second input signal being an inverted signal of the first input signal. The voltage-level shifter also has a first PMOS transistor having a source connected to the first power supply terminal, a gate connected to the first input terminal, and a drain connected to a first output terminal for outputting a first output signal; a second PMOS transistor having a source connected to the first power supply terminal, a gate connected to the second input terminal, and a drain connected to a second output terminal for outputting a second output signal that is an inverted signal of the first output signal; a first NMOS transistor having a drain connected to the first output terminal and a gate connected to the first input terminal; a second NMOS transistor having a drain connected to the second output terminal and a gate connected to the second input terminal; a third NMOS transistor having a source connected to the second power supply terminal, drain connected to the source of the first NMOS transistor, and a gate connected to the second output terminal; and a fourth NMOS transistor having a source connected to the second power supply terminal, a drain connected to the source of the second NMOS transistor, and a gate connected to the first output terminal.
申请公布号 US6510089(B2) 申请公布日期 2003.01.21
申请号 US20020186683 申请日期 2002.07.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAURA TADAYUKI;ATSUMI SHIGERU
分类号 G11C16/06;G11C5/14;G11C16/12;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H03K19/0185;(IPC1-7):G11C7/00 主分类号 G11C16/06
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