发明名称 |
Insulated gate semiconductor device with high minority carrier injection and low on-voltage by enlarged pn-junction area |
摘要 |
A semiconductor device is formed such that a contact surface between a p-type high-concentration semiconductor region and an n-type high-concentration buffer region assumes a convexo-concave shape. This makes it possible to enlarge an area of the contact surface between the p-type high-concentration semiconductor region and the n-type high-concentration buffer region. As a result, holes are injected into an n-type low-concentration drift region from the p-type high-concentration semiconductor region with higher efficiency and with a less voltage drop between the pn-junction. Thus, effects of conductivity modulation can be achieved sufficiently and the on-resistance and the voltage drop of an IGBT can be lowered.
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申请公布号 |
US6509610(B2) |
申请公布日期 |
2003.01.21 |
申请号 |
US20010906825 |
申请日期 |
2001.07.18 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
KAWAHASHI AKIRA;NISHIWAKI KATSUHIKO |
分类号 |
H01L29/744;H01L29/08;H01L29/739;H01L29/78;(IPC1-7):H01L21/336;H01L29/078 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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