发明名称 Semiconductor device and its manufacturing method
摘要 An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second,insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film. The pixel electrode can be overlapped with the first and second wirings so that an area of the pixel electrode can be increased in the display unit of a reflection type.
申请公布号 US6509616(B2) 申请公布日期 2003.01.21
申请号 US20010961525 申请日期 2001.09.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/04 主分类号 G02F1/1368
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