| 摘要 |
A method for forming a storage node electrode of a semiconductor device, includes the steps of: forming a contact plug in an interlayer insulation film on a semiconductor substrate; sequentially stacking etch stop films, a sacrificial insulation film, a polysilicon hard mask and a reflection preventative film on the surface of the interlayer insulation film; forming an opening by etching the hard mask, the sacrificial insulation film and the etch stop films to remove the reflection preventative film to obtain a storage node electrode region; forming a storage node electrode by depositing a conductive material over the resultant structure; forming a filling film for filling up the opening; etching the filling film, the storage node electrode and the hard mask so that the hard mask has a predetermined thickness; and etching the resultant structure with a chemical mechanical polishing process so that the residual hard mask can be completely removed. Thus, the sacrificial insulation film is not excessively etched, thereby preventing an etch step of the sacrificial insulation film between a peripheral region and a cell region, and also obtaining a sufficient capacity of the storage node electrode.
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