| 摘要 |
A semiconductor device according to the present invention includes a first guard ring having conductivity of one of N and P types and a second guard ring formed adjacent to the first guard ring and having conductivity of the other type. The first guard ring is formed by a plurality of land shaped well regions each correspondingly to one cell or a plurality of I/O cells and at least one of the well regions is connected to a first power source line and ay least one of the remaining well regions is connected to a second power source line.
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