发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
Problematic dishing and erosion in forming embedded metal interconnection by a chemical mechanical polishing (CMP) method are suppressed.Formation of embedded Cu interconnects 46a to 46e by chemical mechanical polishing of a Cu film 46 formed in interconnect trenches 40 to 44 is performed by abrasive-grain-free chemical mechanical polishing using a polishing liquid of an abrasive grain content less than 0.5 wt % (CMP of the first step); with-abrasive-grain chemical mechanical polishing using a polishing liquid of an abrasive grain content of 0.5 or more wt % (CMP of the second step); and selective chemical mechanical polishing using a polishing liquid to which an anticorrosive such as benzotriazole (BTA) is added (CMP of the third step).
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申请公布号 |
US6509273(B1) |
申请公布日期 |
2003.01.21 |
申请号 |
US20000527751 |
申请日期 |
2000.03.17 |
申请人 |
HITACHI, LTD. |
发明人 |
IMAI TOSHINORI;OHASHI NAOFUMI;HOMMA YOSHIO;KONDO SEIICHI |
分类号 |
H01L21/3205;H01L21/02;H01L21/304;H01L21/306;H01L21/321;H01L21/768;(IPC1-7):H01L21/302;H01L21/462 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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