发明名称 Method for laser-processing semiconductor device
摘要 A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the irradiated linear laser light and is to be scanned. Also, in a semiconductor device having an analog circuit region and a remaining circuit region wherein the analog circuit region is smaller than the remaining circuit region, a linear laser light having an irradiation area is irradiated to the analog circuit region without moving the irradiation area so as not to overlap the laser lights by scanning. On the other hand, the linear laser light to be scanned is irradiated to the remaining circuit region.
申请公布号 US6509212(B1) 申请公布日期 2003.01.21
申请号 US19990236620 申请日期 1999.01.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG HONGYONG;YAMAGUCHI NAOAKI;TAKEMURA YASUHIKO
分类号 H01L29/786;C30B1/00;G09G3/36;H01L21/00;H01L21/20;H01L21/324;H01L21/477;H01L21/8238;H01L21/84;(IPC1-7):H01L21/00;H01L21/823 主分类号 H01L29/786
代理机构 代理人
主权项
地址