发明名称 Multilayer photoresist process in photolithography
摘要 A multilayer photoresist process in photolithography, which is applicable on a substrate having a composite photoresist layer with a desired thickness formed thereon. The present invention provides a process, comprising the following steps. A photoresist layer is formed on a substrate, and subsequently exposed through a photomask, followed by the developing process to pattern the photoresist. Then, the patterned photoresist layer is stabilized. This sequence is repeated untill at least another one layer is deposited and patterned on the substrate. Each photoresist layer has almost the same pattern with the underlying patterned photoresist layer. Many thin photoresist layers are accumulated to form a composite photoresist layer with a desired thickness.
申请公布号 US6509137(B1) 申请公布日期 2003.01.21
申请号 US20000578105 申请日期 2000.05.24
申请人 WINBOND ELECTRONICS CORP. 发明人 WANG LI-MING;TSAI KAO-TSAIR
分类号 G03F7/095;G03F7/00;G03F7/20;G03F7/26;G03F7/40;H01L21/027;(IPC1-7):G03C5/00 主分类号 G03F7/095
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