Semiconductor device and method for fabricating the same

摘要

A semiconductor device and method of fabricating the same. The semiconductor device includes a first insulating film formed on a substrate and having a plurality of holes therein; a cavity formed under the first insulating film; an impurity region formed in the substrate and around the cavity; a second insulating film formed on portions of the first insulating film to fill the holes and a space between the cavity and the impurity region; a plurality of contact holes formed to expose certain portions of the impurity region; and a plurality of wiring layers formed to be in contact with the impurity region through the contact holes.