发明名称 |
SEMICONDUCTOR HAVING LARGE FRACTION OF MIDDLE- ORDER MATERIAL |
摘要 |
<p>FIELD: manufacture of semiconductor devices. SUBSTANCE: high-quality non-monocrystal silicon alloy material incorporates regions of silicon alloy middle-order material but does not include volume percent required to form percolation channel inside material. Remaining part of material is either amorphous or mixture of amorphous and monocrystal materials. EFFECT: provision for checking local order of semiconductor that has useful properties differing from amorphous and crystalline states. 17 cl, 7 dwg</p> |
申请公布号 |
RU2197035(C2) |
申请公布日期 |
2003.01.20 |
申请号 |
RU19990114852 |
申请日期 |
1997.12.11 |
申请人 |
EHNERDZHI KONVERSHN DIVAJSIZ, INK.;JUNAJTED SOLAR SISTEMZ KORP. |
发明人 |
OVSHINSKI STEHNFORD R.;GUKHA SUBKHENDU;JANG CHI-CHUNG;DENG KSUNMING;DZHOUNS SKOTT |
分类号 |
C23C16/24;H01L21/205;H01L21/336;H01L29/786;H01L29/861;H01L31/02;H01L31/028;H01L31/04;H01L31/20;(IPC1-7):H01L31/028 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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