发明名称 SEMICONDUCTOR HAVING LARGE FRACTION OF MIDDLE- ORDER MATERIAL
摘要 <p>FIELD: manufacture of semiconductor devices. SUBSTANCE: high-quality non-monocrystal silicon alloy material incorporates regions of silicon alloy middle-order material but does not include volume percent required to form percolation channel inside material. Remaining part of material is either amorphous or mixture of amorphous and monocrystal materials. EFFECT: provision for checking local order of semiconductor that has useful properties differing from amorphous and crystalline states. 17 cl, 7 dwg</p>
申请公布号 RU2197035(C2) 申请公布日期 2003.01.20
申请号 RU19990114852 申请日期 1997.12.11
申请人 EHNERDZHI KONVERSHN DIVAJSIZ, INK.;JUNAJTED SOLAR SISTEMZ KORP. 发明人 OVSHINSKI STEHNFORD R.;GUKHA SUBKHENDU;JANG CHI-CHUNG;DENG KSUNMING;DZHOUNS SKOTT
分类号 C23C16/24;H01L21/205;H01L21/336;H01L29/786;H01L29/861;H01L31/02;H01L31/028;H01L31/04;H01L31/20;(IPC1-7):H01L31/028 主分类号 C23C16/24
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