| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device in which impurities due to C and H in a gate insulation film are removed since bond dissociation is performed between a metal element and a ligand, and as a result the fixed electric charge of the gate insulation film is freed and leakage or the like is suppressed by turning the ligand of a CVD raw material to a cyclopentadienyl(Cp) dielectric having high coordination type anion, and the CVD raw material for the manufacture. SOLUTION: In the manufacturing method of the semiconductor device in which the gate insulation film is formed on a silicon single crystal substrate for the gate insulation film, an oxide layer is formed by an organic metal chemical vapor deposition method using a gaseous mixture having an oxidizing gas and an organic metal gas composed of the cyclopentadienyl complex of elements composed of one or more kinds of Ln (Ln is rare earth element).
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