MEMORY CELL, STORAGE CIRCUIT BLOCK, AND METHOD FOR WRITING DATA

摘要

PROBLEM TO BE SOLVED: To provide a memory cell capable of reducing a writing current, to provide a storage circuit block, and to provide a method for writing data. SOLUTION: Related to a memory cell 12, a second bit line 15 is provided at the position where a storage element 28 is clamped with a bit line 14. The second bit line 15 is at least parallel to the first bit line 14 near the storage element 28, while not contacting to the storage element 28.