发明名称 HEAT TREATMENT DEVICE OF SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a device which can ensure temperature uniformity in an outer circumferential edge part of a substrate, by disposing a thin plate-like ring provided on the outside of a substrate as a dummy, at a position which is almost as high as the substrate. SOLUTION: A soaking ring 10, having an inner diameter size equivalent to an outer diameter size of a wafer W, is disposed inside a heat treatment furnace. The wafer W is supported at a support projection 16 of a soaking ring and a tip part of a temperature-sensing element 18 at a position almost as high as a soaking ring. A wafer transfer arm 20 having a contact support pin 22 supporting a wafer in contact with a wafer lower surface is disposed inside a heat treatment furnace. An arm movement mechanism is provided, which makes a wafer transfer arm reciprocate in the horizontal direction between a transfer movement position for moving a wafer in the vertical directions, by supporting it by a contact supporting pin and a backing position which will not overlap a wafer in plan view, and causes it to reciprocate in the vertical directions at a transfer movement position.
申请公布号 JP2003017430(A) 申请公布日期 2003.01.17
申请号 JP20010196241 申请日期 2001.06.28
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 NAKAJIMA TOSHIHIRO;MASUDA MITSUHIRO
分类号 C23C16/44;H01L21/205;H01L21/26;H01L21/677;H01L21/68;H01L21/683;(IPC1-7):H01L21/26 主分类号 C23C16/44
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