| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly integrated semiconductor memory improving data holding characteristic. SOLUTION: The semiconductor memory is provided with an insulating layer 2 formed on a semiconductor substrate 1, a semiconductor layer 3 formed on the insulating layer, a MOS transistor storing a first data state having a drain and source dispersion layer formed to be mutually separated in the semiconductor layer 3 and a gate electrode 5 formed on a gate insulating film formed on the semiconductor layer 3 and having first threshold voltage injecting a number of carriers in the semiconductor layer and a second data state having second threshold voltage discharging the number of the carriers of the semiconductor layer to a drain dispersion layer, the source dispersion layer and a contrary conduction type first dispersion layer 11 formed in the semiconductor layer and contacted on the semiconductor layer under the gate electrode, and the first dispersion layer and a contrary conduction type second dispersion layer 12 formed in the semiconductor layer and contacted on the first dispersion layer. |
