发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide an insulation film of a low dielectric constant and high mechanical strength. SOLUTION: The inorganic insulation film is provided with a periodical porus structure, which is formed on the surface of a substrate and which is located, so as to be parallel to the surface of the substrate or comprises layered columnar holes.</p>
申请公布号 JP2003017486(A) 申请公布日期 2003.01.17
申请号 JP20010198965 申请日期 2001.06.29
申请人 ROHM CO LTD 发明人 OKU YOSHIAKI
分类号 H01L21/768;H01L21/316;H01L23/522;(IPC1-7):H01L21/316 主分类号 H01L21/768
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