SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a crystalline semiconductor film having high uniformity and obtaining high-field effect mobility. SOLUTION: A rare gas element (argon, for example) is added to an amorphous semiconductor film, so that concentration is 1×10<18> to 1×10<22> /cm<3> , and a catalyst element (nickel, for example) is added. In a subsequent heating processing process, the crystalline semiconductor film, where the occurrence of crystal core can be suppressed and crystal particles with large particle sizes are gathered can be obtained.