| 摘要 |
PROBLEM TO BE SOLVED: To separate a collector layer from a board potential, without going through a complicated process in a semiconductor device, provided with a vertical PNP bipolar transistor. SOLUTION: The semiconductor device, having the vertical PNP bipolar transistor, formed in a prescribed element area on a semiconductor substrate, is provided with a high-density embedded N+layer 3 formed in the prescribed element region and a P-type collector layer 5, formed on the layer 3 in close contact. By forming the layer 5 of impurity, having a larger diffusion constant than for the layer 3, the layer 5 can be formed on the layer 3 formed, in common with another element region without special mask alignment.
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