| 摘要 |
PROBLEM TO BE SOLVED: To easily micronize the channel length of a transistor. SOLUTION: A first impurity polycrystal semiconductor film 11 composed of polysilicon containing impurities and a first insulation film 12 are formed on a semiconductor substrate 10. Then, the first insulation film 12 and the first impurity polycrystal semiconductor film 11 are opened by a prescribed pattern and an opening 13 is provided. Then, from the opening 13, ion implantations 15a and 15b are obliquely performed. By the oblique ion implantations 15a and 15b, a region 16c where ions are not implanted is formed at the center of the semiconductor substrate 10 in the opening 13. Then, a sidewall spacer 17 is formed at the opening 13 and a gate electrode 19 is formed.
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