| 摘要 |
PROBLEM TO BE SOLVED: To suppress ruggedness of a thin film generated by an aggregation at formation of the thin film. SOLUTION: A method for forming the thin film comprises steps of applying a power between a pair of electrodes in side a high-vacuum housing to set a gas in the housing to a plasma state to generate ions, making the ions collide against a target, made of a material, used as the thin film, coating atoms which recoiled from the target on a substrate to form the thin film. In this method, the film is formed with the power changed with passage of time.
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