| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing equipment which enables deposition of an epitaxial film of the uniform thickness on a substrate. SOLUTION: A cross-sectional area of a reaction furnace, in the direction crossing at right angles with the gas flow of a material gas 10 flowing in the reaction furnace, is smaller on the downstream side of the material gas 10 than on the upstream side, which compensates for the density of a material on the downstream side of the material gas 10 in the reaction furnace 8. Consequently, an epitaxial film deposited on a substrate 6 mounted on a susceptor 15 has a uniform thickness.
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