| 摘要 |
PROBLEM TO BE SOLVED: To remarkably suppress lowering of inside generation voltage applied on a substrate and optimize an accumulation charge amount of a photodiode. SOLUTION: A metal wiring layer in a protection circuit part 43 is separated into a first metal wiring layer connected to n type dispersion layer areas 36, 37 being a source area and applying first voltage through a gate/source terminal 54, and a second metal wiring layer connected to a p type well area 32 and applying second voltage VL through a p well terminal 55, and the second voltage is set lower than the first voltage.
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