发明名称 METHOD OF FORMING INSULATION FILM AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To form a layer insulation film, capable of preventing F and H from being diffused from an FSG film and preventing RC delay. SOLUTION: After forming a USG film on the surface of a metal wiring formed on a substrate, a nitride film is formed on the surface of this USG. After this, FSG is formed on the surface of this nitride film, to form the layer insulation film.
申请公布号 JP2003017490(A) 申请公布日期 2003.01.17
申请号 JP20010200821 申请日期 2001.07.02
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 GU HONEI
分类号 H01L21/768;H01L21/316;H01L21/318;H01L23/522;(IPC1-7):H01L21/316 主分类号 H01L21/768
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