| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a small and high performance high frequency power semiconductor device having a smaller phase difference within an active element. SOLUTION: This device has an assembly substrate 2 having input side high frequency transmission lines (61a, 62a and 63a) and output side high frequency transmission lines (61b, 62b and 63b), a first semiconductor chip 51 mounted on a first main surface side of the assembly substrate 2, and a second semiconductor chip 52 mounted on a second main surface side of the assembly substrate 2. The semiconductor chip 51 is provided with a semiconductor active element having a first input electrode (gate electrode pad) 408 and a first output electrode (drain electrode) 410. The semiconductor chip 52 is provided with a semiconductor active element having a second input electrode 428 and a second output electrode 430 which are in a mirror image relation mutually with the first input electrode 408 and the first output electrode 410 respectively.</p> |
