| 摘要 |
PROBLEM TO BE SOLVED: To correct size variation of an isolated pattern resulting from an etching process. SOLUTION: A method includes a stage where a permissible value of an etching conversion difference is determined and the maximum distance Xmax between patterns corresponding to the determined etching conversion difference is found, a stage where a design layout is generated by arranging gate patterns so that the distance XG- G between gate patterns is less than the maximum distance Xmax or arranging a gate pattern and a dummy pattern so that the distance XG- D between the gate pattern and dummy pattern is less than the maximum distance Xmax , a stage where design data of a mask are converted according to the design layout, and a stage where a gate pattern is formed by lithography and etching by using the converted design data. |
