| 摘要 |
PROBLEM TO BE SOLVED: To form an element layer having proper crystallinity by preventing the warping of a substrate in a manufacturing process, in a method of manufacturing a III nitride compound semiconductor element. SOLUTION: Base layers are formed simultaneously on both surfaces of an auxiliary substrate, which is formed of a material different from that of a III nitride compound semiconductor, and then the element layer formed of a III nitride compound semiconductor is formed on the base layer on one side. |
