| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin semiconductor film by which a thin semiconductor film which has a thickness larger than the lower limit value of the conventional smart cutting method and, in its turn, is suitable for a solar battery, etc., can be manufactured highly efficiently with a high yield. SOLUTION: After a high-hydrogen concentration layer having a concentration peak at a depth of 5μm from the main surface of a crystalline semiconductor substrate in its depth-wise hydrogen concentration profile is formed in the substrate by implanting negative hydrogen ions into the substrate, the thin semiconductor film is peeled from the substrate at the high-hydrogen concentration layer.</p> |
